Asta Tamuleviciene, Šarunas Meškinis, Vitoldas Kopustinskas, Sigitas Tamulevičius

Multilayer amorphous hydrogenated carbon (a-C:H) and SiO_x doped a-C:H films for optical applications

Thin Solid Films 519 (2011) 4004-4007

In this study SiO_x doped amorphous hydrogenated carbon (a-C:H) films were formed from hexamethyldisiloxane (with hydrogen transport gas) by closed drift ion beam deposition applying variable ion beam energy (300-800 eV). The band gap dependence on the deposition energy was determined and used in production of SiO_x doped a-C:H and a-C:H (formed from acetylene gas) multilayer (two and four layers) stack. Optical properties of the multilayer structures as well as individual layers were analysed in the UV-VIS-NIR range (200-1000 nm). It was shown that employing double or four layer systems, the reflectivity of the multilayer structure-crystalline silicon can be tuned to almost 0% at specific wavelength range (550-950 nm), important in solar cell applications.

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Cited Articles

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