D. G. Diso, F. Fauzi, O. K. Echendu, A. R. Weerasinghe, I. M. Dharmadasa
Proc: Electrodeposition and characterisation of ZnTe layers for application in CdTe based multi-layer graded bandgap solar cells
Condensed Matter and Materials Physics Conference (CMMP10), 14–16 December 2010, University of Warwick, UK (2011) pp.012040
Published by IOP Publishing
Zinc Telluride (ZnTe) thin films have been deposited on glass/conducting glass substrates using low-cost aqueous electrodeposition (ED) method. The structural, optical and morphological properties of the resulting films have been characterized using X-ray diffraction (XRD), spectrophotometry and Scanning Electron Microscopy (SEM). It has been confirmed by XRD technique that the deposited layers are nano-and polycrystalline mixture for as deposited layers. Photoelectrochemical (PEC) studies revealed that the layers are p-type in electrical conduction. Optical absorption measurement has been used for the bandgap determination of the deposited layers. The bandgap of the polycrystalline ZnTe layers are in the range (2.65 - 2.75) eV for the ZnSO4 precursor, and (2.70 - 2.87) eV for the ZnCl2 precursor instead of (2.21 - 2.26) eV reported for crystalline ZnTe. This increase may be due to the quantum effect which confirmed by the absence of strong XRD peaks from these layers and/or inclusion of ZnO in the deposited layers.
This paper may also be available to you online
Cited articles
-
Franta D., Ohlídal I., Klapetek P., Montaigne-Ramil A., Bonanni A., Stifter D., Sitter H.,
Optical properties of ZnTe films prepared by molecular beam epitaxy,
Thin Solid Films 468 (2004) 193–202