Main page | Journal list | Log-in

Karel Navrátil, Ivan Ohlídal, František Lukeš

The physical structure of the interface between single-crystal GaAs and its oxide film

Thin Solid Films 56 (1979) 163–171

In this paper we are concerned with the determination of the fundamental statistical characteristics of the boundary between a GaAs single crystal and its oxide film formed by thermal oxidation. These characteristics, i.e the standard deviation of height irregularities and the slopes of these irregularities, were determined by optical methods (reflectometry, ellipsometry, interferometry) and by analysis of the traces obtained with a stylus instrument after dissolution of the oxide film. The aim of this contribution was to determine the dependences of the given characteristics on the temperature and time of oxidation.

Download PDF (10176 kB)

This article may also be available to you online

You can also contact one of the authors:

Citing Articles

  1. Ohlídal I., Franta D., Hora J., Navrátil K., Weber J., Janda P.,
    Analysis of thin films with slightly rough boundaries,
    Mikrochimica Acta 15 (1998) 177–180
  2. Ohlídal I., Franta D.,
    Ellipsometry of thin film systems,
    Progress in Optics 41 (2000) 181-282