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T. Gandhi, K. S. Raja, M. Misra

Synthesis of ZnTe nanowires onto TiO2 nanotubular arrays by pulse-reverse electrodeposition

Thin Solid Films 517 (2009) 4527–4533

Growth of ZnTe nanowires using a pulse-reverse electrodeposition technique from a non-aqueous solution is reported. ZnTe nanowires were grown on to an ordered nanotubular TiO2 template in a propylene carbonate solution at 130 °C inside a controlled atmosphere glove box. The pulse-reverse electro deposition process consisted of a cathodic pulse at -0.62 V and an anodic pulse at 0.75 V Vs Zn2+/Zn. Stoichiometry growth of crystalline ZnTe nanowires was observed in the as-deposited condition. The anodic pulse cycle of the pulse-reverse electrodeposition process presumably introduced zinc vacancies as deep level acceptors at an energy level of Ev+0.47 eV. The resultant ZnTe nanowires showed p-type semiconductivity with a resistivity of 7.8×104 Ωcm and a charge carrier density of 1.67×1014 cm-3. Annihilation of the defects occurred upon thermal annealing that resulted in marginal decrease in the defect density.

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