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A. Paneva, Ivan Ohlídal

Multiple angle of incidence ellipsometric analysis of non-absorbing two-layer and three-layer systems

Thin Solid Films 145 (1986) 23–37

A method known as multiple angle of incidence (MAI) ellipsometry was used to obtain a complete optical analysis of non-absorbing two-layer and three-layer systems deposited onto silicon single-crystal substrates. It is shown that the use of MAI ellipsometry enables the evaluation of all the optical parameters characterizing the multilayer systems mentioned with a high accuracy if the thin films forming these systems are of sufficient thickness and the values of the optical parameters sought are known with sufficient relative accuracy before the application of this method These conclusions are demonstrated by experimental results obtained for samples of the following systems: SiO2/Si3N4, Si3N4/SiO2 and SiO2/Si3N4/MgF2. The ellipsometric parameters were measured at a wavelength of 632.8 nm.

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