B. Kotlyarchuk, V. Savchuk
Investigation of ZnTe thin films grown by Pulsed Laser Deposition method
Physica Status Solidi B 244 (2007) 1714–1719
This paper is devoted to optimization of the Pulsed Laser Deposition (PLD) growth condition of ZnTe films on various substrates and subsequent investigation of relevant parameters of growth process, structural, optical and electrical properties of grown films. Studies of the effect of growth parameters on the structural quality and properties of grown films were carried out. X-ray diffraction measurements showed that the ZnTe films, which have been deposited at optimal substrate temperatures, were characterized by a (111) preferred orientation with large average grain size. The optical transmission and reflectance in the energy range 1.5–5.5 eV for films grown at various substrate temperatures were measured. We calculated the variation in the absorption coefficient with the photon energy from the transmittance spectrum for samples grown at various substrate temperatures. Obtained data were analyzed and the value of the absorption coefficient, for allowed direct transitions, has been determined as a function of photon energy. We found that the undoped ZnTe films, which were grown by the PLD method, are typically p-type and possess resistivity in the range of 103 Ω cm at room temperature.
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Franta D., Ohlídal I., Klapetek P., Montaigne-Ramil A., Bonanni A., Stifter D., Sitter H.,
Optical properties of ZnTe films prepared by molecular beam epitaxy,
Thin Solid Films 468 (2004) 193–202