Vitoldas Kopustinskas, Šarunas Meškinis, Sigitas Tamulevičius, M. Andrulevičius, B. Čižiūtė, Gediminas Niaura

Synthesis of the silicon and silicon oxide doped a-C:H films from hexamethyldisiloxane vapor by DC ion beam

Surface and Coatings Technology 200 (2006) 6240–6244

In this research silicon and silicon oxide doped hydrogenated amorphous carbon films have been synthesized by direct ion beam deposition from hexamethyldisiloxane (HMDSO) vapor mixture with hydrogen (H₂) or acetylene (C₂H₂) gas. Adherent and stable coatings of the thickness up to 0.8 μm were deposited onto the stainless steel and tooling steel. Presence of a few atomic percents of Si was enough to achieve stable coatings. In the HMDSO+C₂H₂ film silicon is found in the form of the SiC while in HMDSO+H₂ film Si presents as silicon oxide (SiO_x). Raman spectra of the deposited films were typical for diamond like carbon (DLC). Films deposited from mixture with hydrogen gas had higher optical transparency (E₀₄ bandgap 3.1 vs. 1.6 eV for film deposited from mixture with acetylene gas) and lower refractive index (1.7 vs. 2.1 at 632.8 nm wavelength). However, more transparent SiO_x doped DLC films had more disordered structure as well.

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