Xin Wang, Ye Li, GuoZheng Wang, Rong Xiang, DeLong Jiang, ShenCheng Fu, Kui Wu, XiaoYu Yang, QingDuo DuanMu, JingQuan Tian, LiChen Fu

Characterization of NiO thin film grown by two-step processes

Physica B 404 (2009) 1058–1060

NiO_x thin films were grown on quartz-glass substrates by two-step process: oxidation of metal Ni thin film which was obtained by vacuum evaporation method. The structural, optical and electrical properties of NiO_x thin film were investigated by X-ray diffraction, absorption spectra and Hall measurement, respectively. The oxidation temperature could influence the structural, electrical and optical properties of NiO_x thin film. At lower oxidation temperature (623 K), the oxidation process was not finished completely. With the increase of oxidation temperature, Ni thin films were totally oxidized into p-type NiO thin films and the optical absorption edge became steeper. Furthermore, the conductivity and carrier concentration of p-type NiO thin film decreased with the increase of oxidation temperature.

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