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I. H. Campbell, B. K. Crone

Energy barriers from ferromagnetic contacts to semiconducting polymers

Applied Physics Letters 90 (2007) 242107

The authors present built-in potential, current-voltage (I-V), and electroluminescence-voltage (EL-V) measurements of as deposited and plasma oxidized ferromagnetic metal/polymer/Ca light-emitting diode structures. They specifically considered Co, Fe, Ni, and a Ni:Fe alloy in contact with poly[2-methoxy,5-(2'-ethyl-hexyloxy)–1,4-phenylene vinylene] and poly (9,9-dioctylfluorene). Built-in potential measurements showed that the oxidized films had hole Schottky barriers corresponding closely to the pristine metal work function, whereas the as deposited films had barriers 0.65–0.95 eV larger. Plasma oxidation improved hole injection, consistent with the reduced energy barriers, as demonstrated by I-V and EL-V measurements. These results enable design of spin based organic electronic devices.

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