Arup Jyoti Choudhury, Joyanti Chutia, Hemen Kakati, Shruti A. Barve, Arup Ratan Pal, Neelotpal Sen Sarma, Devasish Chowdhury, Dinkar S. Patil
Studies of radiofrequency plasma deposition of hexamethyldisiloxane films and their thermal stability and corrosion resistance behavior
Vacuum 84 (2010) 1327–1333
Hexamethyldisiloxane (HMDSO) films (thickness: 282-929 nm) are prepared by the radiofrequency plasma assisted chemical vapour deposition (RF-PACVD) method using an Ar/HMDSO/O-2 gas mixture. The deposition process is carried out in an RF reactor at a working pressure of 1.2 x 10(-1) mbar and an RF power range of 20-100 W. From the studies on Ar/O-2 and Ar/HMDSO/O-2 discharge characteristics using a self-compensated emissive probe, it is revealed that electrons play an important role in the plasma polymerization of HMDSO monomers. Optical emission spectroscopy (DES) and Fourier transform infrared (FT-IR) spectroscopy show that the plasma deposited HMDSO films tend to be more inorganic in nature at higher RF powers. A film prepared at an RF power of 100W exhibits more thermal stability and corrosion resistance behavior in comparison to films deposited at lower powers (20-80 W). A correlation of the results obtained from DES and FT-IR analyses with the thermal stability and corrosion resistance behavior of the films has been attempted.
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