A.M. Mahajan, L.S. Patil, D.K. Gautam

Influence of process parameters on the properties of TEOS-PECVD-grown SiO₂ films

Surface and Coatings Technology 188 (2004) 314–318

The influence of chamber pressure, substrate temperature and mass flow ratio on growth rate, refractive index and stress of plasma-enhanced chemical vapor deposition (PECVD) grown SiO₂ films has been investigated. In this study, the silicon dioxide films were grown by homemade PECVD system by carrying three different sets of processes for variation in chamber pressure (70–240 Pa), substrate temperature in the range of 523–673 K and flow rate ratio (O-2/TEOS) of 2–10. In these processes, liquid tetraethoxysilane (TEOS) has been used as a source of Si instead of SiH₄ to avoid difficult handling of SiH₄. The growth rate (by measuring thickness for specified time process), refractive index and stress of the deposited SiO₂ films have been determined by ellipsometry technique. The present study reveals that, in order to grow good quality SiO₂ films for their microelectronics applications, where stress is of prime importance, deposition processes of TEOS-PECVD should be carried out with substrate temperature and flow ratio variations. However, for optoelectronics applications, the growth processes carried out with varying chamber pressure are believed to be highly desirable, they allow precise control of the refractive index and a higher thickness.

Cited Articles

1. Zajíčková L., Ohlídal I., Janča J.,
   Plasma-Enhanced Chemical Vapour Deposition of Thin Films from Tetraethoxysilane and Methanol: Optical Properties and XPS Analyses,
   Thin Solid Films 280 (1996) 26–36