Hiroaki Kakiuchi, Hiromasa Ohmi, Takahiro Yamada, Keiji Yokoyama, Kohei Okamura, Kiyoshi Yasutake

Silicon Oxide Coatings with Very High Rates (> 10 nm/s) by Hexamethyldisiloxane-Oxygen Fed Atmospheric-Pressure VHF Plasma: Film-Forming Behavior Using Cylindrical Rotary Electrode

Plasma Chem. Plasma Process. 32 (2012) 533-545

Silicon oxide films are deposited in atmospheric-pressure (AP) He/O-2/HMDSO plasma excited by a 150 MHz VHF power using a cylindrical rotary electrode. The atomic bonding configurations and deposition rate are studied by controlling the O-2 concentration (O-2/HMDSO source ratio) and VHF power density, the other parameters being maintained constant. Under the addition of 0.03 % O-2 to the process gas mixture (O-2/HMDSO a parts per thousand 0.09), AP-VHF plasma greatly enhances the fragmentation and oxidation of HMDSO, so that an almost inorganic film is obtained at a very high deposition rate of 33 nm s(-1). A silicon oxide coating on a polycarbonate pane is demonstrated with no significant thermal deformation of the pane, showing that AP-VHF plasma would be an efficient coating tool for polymer substrates.

Cited Articles

1. Zajíčková L., Buršíková V., Peřina V., Macková A., Subedi D. P., Janča J.,
   Plasma Modification of Polycarbonates,
   Surface and Coatings Technology 142 (2001) 449–454