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T. Opalinska, B. Ulejczyk, L. Karpinski, Krzysztof Schmidt-Szalowski

Deposition of thin films based on silica on polycarbonates by pulsed dielectric barrier discharge

Polimery 49 (2004) 257-263

The process of thin organo-silica film deposition on polycarbonate in pulsed dielectric barrier discharge was studied. Thin film was deposited from the gas mixture comprising helium, oxygen and tetraethoxysilane under atmospheric pressure without pre-heating of polycarbonate plate. Influences of process parameters, namely the current of single pulse of discharge, PC plate arrangement and position, and plasma-generating gas composition on the deposition rate were investigated. Deposition rate increased from 3.4 to 40.8 nm/min when the current of single pulse increased from 50 to 100 A. The presence of oxygen in plasma-generating gas was necessary to thin organosilicon film forming, but the excess Of O-2 concentration caused decreasing of film deposition rate, for example: deposition rate was 14.9 or 6.0 nm/min when concentration Of O-2 was changed from 5 to 20% by vol. In the films, the following elementaly composition (Si, C, O, H) and morphology of deposited films were characterized. These films were smooth and transparent.

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Cited Articles

  1. Zajíčková L., Buršíková V., Peřina V., Macková A., Subedi D. P., Janča J.,
    Plasma Modification of Polycarbonates,
    Surface and Coatings Technology 142 (2001) 449–454