T. Opalinska, B. Ulejczyk, L. Karpinski, Krzysztof Schmidt-Szalowski

Deposition of thin films based on silica on polycarbonates by pulsed dielectric barrier discharge

Polimery 49 (2004) 257-263

The process of thin organo-silica film deposition on polycarbonate in pulsed dielectric barrier discharge was studied. Thin film was deposited from the gas mixture comprising helium, oxygen and tetraethoxysilane under atmospheric pressure without pre-heating of polycarbonate plate. Influences of process parameters, namely the current of single pulse of discharge, PC plate arrangement and position, and plasma-generating gas composition on the deposition rate were investigated. Deposition rate increased from 3.4 to 40.8 nm/min when the current of single pulse increased from 50 to 100 A. The presence of oxygen in plasma-generating gas was necessary to thin organosilicon film forming, but the excess Of O-2 concentration caused decreasing of film deposition rate, for example: deposition rate was 14.9 or 6.0 nm/min when concentration Of O-2 was changed from 5 to 20% by vol. In the films, the following elementaly composition (Si, C, O, H) and morphology of deposited films were characterized. These films were smooth and transparent.

This article may also be available to you online

Cited Articles

1. Zajíčková L., Buršíková V., Peřina V., Macková A., Subedi D. P., Janča J.,
   Plasma Modification of Polycarbonates,
   Surface and Coatings Technology 142 (2001) 449–454