B. Ulejczyk, L. Karpinski, M. Scholz, M. A. Ekwinska, Z. Rymuza, T. Opalinska, E. A. Zukowska, Krzysztof Schmidt-Szalowski

Deposition of silicon oxide film from tetraethoxysilane using a pulsed dielectric barrier discharge

Czechoslovak Journal of Physics 56 (2006) B1383-B1390

Thin silicon oxide films were deposited on polycarbonate (PC) plates in a pulsed dielectric barrier discharge (PDBD) at atmospheric pressure and ambient temperature. The films were deposited from gas mixtures of tetraethoxysilane (TEOS), helium, and oxygen. The effects of gas composition on the deposition rate and on the surface roughness were investigated. It was shown that the oxygen concentration was the only parameter influencing the deposition rate and the roughness of the films.

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Cited Articles

1. Zajíčková L., Buršíková V., Peřina V., Macková A., Subedi D. P., Janča J.,
   Plasma Modification of Polycarbonates,
   Surface and Coatings Technology 142 (2001) 449–454
2. Zajíčková L., Buršíková V., Peřina V., Macková A., Subedi D. P., Janča J.,
   Plasma Modification of Polycarbonates,
   Surface and Coatings Technology 142 (2001) 449–454