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Daniel Franta, Vilma Buršíková, Lenka Zajíčková

Proc: Optical characterization of DLC:Si films prepared by PECVD

Proceedings of 13th Symposium on Application of Plasma Processes, 13th Symposium on Application of Plasma Processes (2001) pp.87-88

Published by Comenius University and Union of Slovak Matematicians and Physicists, Bratislava, Slovakia

Multi-sample modification of variable angle of incidence spectroscopic ellipsometry (VASE) was used to characterize silicon doped diamond like carbon (DLC:Si) films prepared by plasma enhanced chemical vapor deposition (PECVD). These films were prepared on wafers of silicon single crystal in the planar capacitively coupled RF reactor. The gas feed for deposition was a mixture of methane (CH4), hexamethyldisiloxane (HMDSO) and argon (Ar).

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