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S. A. Nikiforov, H. J. Ryoo, H. S. Oh, G. H. Rim

Proc: (PID)-D-3 processing of DLC coatings for different applications

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 4 (2008) pp.968-972

Published by WILEY-V C H VERLAG GMBH

DLC (a-C:H) and Si-DLC coatings have been deposited on various materials (steel, aluminium, silicon, glass, polymers) using a 1-m(3) interior-antenna ICP (PID)-D-3 facility with HMDSO and toluene as precursors. For conformal treatment of 3-D workpiecees, a low-voltage (0.5-1.) k.V, high repetition rate (up to 70 kHz) pulsing was applied. However, DLC formation on dielectric substrates was performed at higher. (2 - 10) kV voltage using short (1-1.5) mu s pulses to minimize surface charging. Coating adhesion was achieved by formation of multi layer structure comprising Si-containing buffer layer, transient layer, DLC layer with gradually increasing hardness, and top hard DLC. Film hardness was (5 - 20) GPa, and the deposition rate (4-0.5) mu m/h. DLC surface roughness was (0.7-60) nm and water contact angle 70 degrees - 110 degrees depending on process parameters which implies various applications. Batch processing of sliding parts, cutting tools, glass moulds was performed. Double-side DLC coating on polymer web eliminated its rolling up due to the coating stress. With novel ICP antenna the DLC processing is promising for large-scale nano pattern transfer technology. (C) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Cited articles

  1. Zajíčková L., Buršíková V., Peřina V., Macková A., Janča J.,
    Correlation Between SiOx Content and Properties of DLC : SiOx Films Prepared by PECVD,
    Surface and Coatings Technology 174 (2003) 281–285