Petr Sládek, Vilma Buršíková, Pavel Sťahel

Proc: Structural and defect changes of hydrogenated SiGe films due to annealing up to 600 degrees C

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7 NO 3-4 (2010) pp.820-823

Published by WILEY-V C H VERLAG GMBH

In order to better understand the effects of the hydrogen incorporation on the defects and the disorder in the un-doped nano/microcrystalline SiGe:H, we performed a comparative study on samples deposited under different plasma conditions. With variation of the pressure, we were able to change the structure of SiGe: H films. We have used the combination of the infrared spectroscopy, CPM, PDS and thermal desorption measurements to study the thermal dependence of defect density, disorder, as well as hydrogen concentration. The film mechanical properties were tested by depth sensing indentation technique. The results showing a different hydrogen bonding with the change of deposition conditions are interpreted as a whole by terms of the specific local hydrogen bonding environment, related to different growth mechanism. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

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