Y. S. Kim, J. H. Lee, J. T. Lim, Jun-Woo Park, Geun Young Yeom

Atmospheric pressure PECVD of SiO(2) thin film at a low temperature using HMDS/O(2)/He/Ar

Thin Solid Films 517 (2009) 4065-4069

SiO(2)-like thin films were deposited at a low temperature (< 50 degrees C) by a remote-type, atmospheric pressure plasma enhanced chemical vapor deposition (AP-PECVD) using a pin-to-plate-type, dielectric barrier discharge with gas mixtures containing hexamethyldisilazane (HMDS)/O(2)/He/Ar. The film characteristics were investigated according to the HMDS and O(2) flow rates. To obtain a more SiO(2)-like thin film, an adequate combination of HMDS and oxygen flow rates was required to remove the -(CH(3))(x) bonding in the HMDS and to oxidize the Si in HMDS effectively. At the optimized flow rates, the surface roughness of the SiO(2)-like thin film was also the lowest. By using HMDS (50 sccm) and O(2) (500 sccm) flow rates in the gas mixture of HMDS/O(2)/He (2 slm)/Ar (600 sccm), SiO(2)-like thin films with a low impurity (<6.35%C) were obtained at a deposition rate of approximately 10.7 nm/min. (C) 2009 Elsevier B.V. All rights reserved.

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