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C. K. Chung, C. W. Lai, C. C. Peng, B. H. Wu

Raman inspection for the annealing induced evolution of sp(2) and sp(3) bonding behavior in sandwiched Si/C/Si multilayer

Thin Solid Films 517 (2008) 1101-1105

The effect of annealing on the sandwiched Si/C/Si multilayer on a Si(100) Substrate using ion beam sputtering (IBS) system under ultra-high vacuum (UHV) was investigated. Carbon layer thickness was fixed at 100 nm and a-Si ranged from 10 nm to 25 nm. Rapid thermal annealing was performed to investigate the evolution of sp(2)-sp(3) bonding at annealing temperature from room temperature (RT) to 750 degrees C and annealing time from 0.5 to 2 min. Raman spectroscopy was utilized to characterize bonding behavior of Si/C/Si multilayers for the variation of graphite peak (G-peak), peak (D-peak) of carbon film at specific wavenumbers shift. The-higher the integrated intensity ratio (I(D)/I(G)), the more the sp(2) bonds is. From experimental results, I(D)/I(G)., ratio increases with annealing temperature from RT to 750 degrees C due to graphitization effect for the increased sp(2) bonds. However, I(D)/I(G) ratio reduces a little with annealing time from 0.5 to 2 min, It implies that a little increase of sp(3) bonds of carbon, which is primarily from the sp(3) Si-C bonds, can be an index of the formation of SiC. Comparing the effect of both annealing temperature and time oil the evolution of sp(2)-sp(3) bonds, the annealing temperature dominates more on the sp(2)-sp(3) evolution of a-Si/C/a-Si on the Si(I 00) under rapid thermal annealing than the annealing time. Also, AES depth profile was used to examine the interdiffusion and reaction between a-Si and C for SiC formation and had a consistent result with Raman. (C) 2008 Elsevier B.V. All rights reserved.

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