Axel Sonnenfeld, Tin Maung Tun, Lenka Zajíčková, A. V. Kozlov, Hans-Erich Wagner, Jurgen Behnke, Rainer Hippler
Deposition Process Based on Organosilicon Precursors in Dielectric Barrier Discharges at Atmospheric Pressure - A Comparison
Plasmas and Polymers 6 (2001) 237-266
Dielectric barrier discharges (DBD) at atmospheric pressure are presented as a tool to create organosilicon deposits on technical planar aluminium substrates (up to 15 x 8 cm2) by admixing small amounts of hexamethyldisiloxane (HMDSO) and tetraethylsilane (TEOS) to the carrier gas of the discharges. Using barrier materials of different specific capacities (2.6 x 10E4 and 3.2 pF/cm2) in two electrode arrangements operated at less than 1 W, the influence of the filament properties on the deposition is studied. In comparison to these arrangements, a third electrode setup with a barrier of the specific capacity of 2.9 pF/cm2 is operated at approximately 50 W to study the influence of the specific energy of the plasma (energy per molecule) on the deposition process. The plasma chemical process was studied quantitatevly by Gas Chromatography, and properties of the plasma-treated substrates were examined by means of X-ray Photoelectron Spectroscopy (XPS), Fourier Transform Infrared (FTIR) spectroscopy, as well as visually.
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