J. M. Chen, JH Davidson

Chemical vapor deposition of silicon dioxide by direct-current corona discharges in dry air containing octamethylcyclotetrasiloxane vapor: Measurement of the deposition rate

Plasma Chem. Plasma Process. 24 (2004) 169-188

Experiments in a positive-polarity, wire/plate electrode establish the effects of the concentration of octamethylcyclotetrasiloxane (150 - 1100 ppm) and the operating current (0.5 - 2.55 muA/cm length of wire) on the rate of deposition of silicon dioxide on the high voltage wire. The wire is 100 mm radius tungsten and the wire-to-plate spacing is 1.5 cm. Analyses of the deposit with X-ray diffraction, energy dispersive X-ray spectroscopy, and X-ray photoelectron spectroscopy show that it is amorphous silicon dioxide. The deposition rate increases linearly with increasing silicone concentration and corona current. For the concentrations of silicone likely to present in indoor air, the gas-phase processes limit the rate of deposition.

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Cited Articles

1. Zajíčková L., Janča J., Peřina V.,
   Characterization of Silicon Oxide Thin Films Deposited by Plasma Enhanced Chemical Vapour Deposition from Octamethylcyclotetrasiloxane/Oxygen Feeds,
   Thin Solid Films 338 (1999) 49–59