Angelique Bousquet, Agnés Granier, Gilles Cartry, A. Goullet

Kinetics of O and H atoms in pulsed O(2)/HMDSO low pressure PECVD plasmas

Journal of Optoelectronics and Advanced Materials 10 (2008) 1999-2002

The 0 and H atom kinetics in a low pressure inductively coupled radiofrequency O(2)/Hexamethyldisiloxane and water vapour pulsed plasma is investigated by Time-Resolved Optical Emission Spectroscopy. The O and H-atom loss coefficients in the post-discharge of O(2)/HMDSO pulsed plasmas were measured to be 210(-3) and 3.10(-4) respectively. Such low recombination coefficients, as compared to the ones measured in oxygen plasmas (approximate to 10(-2)), are attributed to the adsorption of OH and H(2)O at the reactor walls which limits the O and H atom recombination. O and H atoms are likely to be responsible for HMDSO dissociation and subsequent film deposition during the post-discharge.

Cited Articles

1. Bousquet A., Buršíková V., Goullet A., Djouadi A., Zajíčková L., Granier A.,
   Comparison of Structure and Mechanical Properties of SiO2-Like Films Deposited in O-2/HMDSO Pulsed and Continuous Plasmas,
   Surface and Coatings Technology 200 (2006) 6517–6521