J. H. Lee, Y. S. Kim, Jong Sik Oh, S. J. Kyung, J. T. Lim, Geun Young Yeom

Characteristics of SiO(x) Thin Film Deposited by Atmospheric Pressure Plasma-Enhanced Chemical Vapor Deposition Using PDMS/O(2)/He

Journal of the Electrochemical Society 156 (2009) D248-D252

Silicon oxide thin films were deposited using a modified, pin-to-plate, dielectric barrier discharge system with polydimethylsiloxane (PDMS), bubbled by He/O(2) gas mixtures at atmospheric pressure and a temperature of less than 50 degrees C. Increasing PDMS flow rate in the gas mixture increased the deposition rate, but also increased the surface roughness due to the formation of particles in the gas phase as a result of increased PDMS and silanol groups, leading to incomplete decomposition or oxidation of PDMS. The increase in the ratio of oxygen flow rate to PDMS flow rate decreased the surface roughness with increasing deposition rate due to the efficient oxidation of PDMS. However, when the oxygen flow rate was raised above 1 slm, due to the increased oxidation of PDMS in the gas phase and the decreased PDMS dissociation by the decreased plasma density, the surface roughness was again increased with decreasing deposition rate. At the gas mixture of 9 slm PDMS/He and 1 slm oxygen, a smooth, SiO(2)-like thin film was obtained at a deposition rate of 12 nm/min. (C) 2009 The Electrochemical Society. {[}DOI: 10.1149/1.3129464] All rights reserved.

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