Karel Navrátil, Ivan Ohlídal, František Lukeš

A model of oxide film originating at thermal oxidation of GaAs

Czechoslovak Journal of Physics 27 (1977) 672–681

In this paper an approximative procedure to determine of the most probable model of oxide film originating at thermal oxidation of GaAs single-crystal samples within the temperature range 480–530 °C is proposed. It is shown that the system presented is more complicated if compare with that presumed previously.

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